Yellow laser at 573 nm generated by intracavity SHG diodeside-pumped Raman laser

dc.creatorFERREIRA, MERILYN S.
dc.creatorPASK, HELEN M.
dc.creatorWETTER, NIKLAUS U.
dc.creatorADVANCED SOLID STATE LASERS
dc.date2020-03-26T15:16:00Z
dc.date2020-03-26T15:16:00Z
dc.dateSeptember 29 - October 3, 2019
dc.date.accessioned2023-09-28T14:14:40Z
dc.date.available2023-09-28T14:14:40Z
dc.identifierhttp://repositorio.ipen.br/handle/123456789/30964
dc.identifier0000-0002-9379-9530
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/9001187
dc.descriptionA diode side-pumped Nd:YLiF4 crystal for fundamental wavelength generation and intracavity Stokes conversion in KGW are employed to obtained 6.1W maximum output power, 11.9% slope efficiency and 11.8% diode-to-yellow conversion efficiency at 573 nm.
dc.publisherOSA
dc.relationLaser Congress 2019 (ASSL, LAC, LS&C)
dc.rightsclosedAccess
dc.titleYellow laser at 573 nm generated by intracavity SHG diodeside-pumped Raman laser
dc.typeResumo de eventos cient??ficos
dc.coverageI
dc.localWashington, DC, USA


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