Optimization of BGO Er/Yb doped pedestal waveguide amplifiers with Si nanostructures

dc.creatorSILVA, DIEGO S. da
dc.creatorKASSAB, LUCIANA R.P.
dc.creatorJIMENEZ-VILLAR, ERNESTO
dc.creatorWETTER, NIKLAUS U.
dc.creatorSBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE
dc.date2019-10-16T19:05:22Z
dc.date2019-10-16T19:05:22Z
dc.dateOctober 7-9, 2019
dc.date.accessioned2023-09-28T14:12:15Z
dc.date.available2023-09-28T14:12:15Z
dc.identifierhttp://repositorio.ipen.br/handle/123456789/30288
dc.identifier0000-0002-9379-9530
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/9000520
dc.descriptionIn this work we review the recent advances in pedestal waveguide amplifier fabrication. The improvement of conventional photolithography and plasma etching methods brings advantages that benefit light guiding and reduce propagation losses, mainly in the 3rd telecommunication windows (??~1550 nm). Yb3+/Er3+ codoped Bi2O3-GeO2 thin films, with and without Si nanostructures, are obtained by RF Magnetron sputtering deposition and are used as core layer of 500 nm height in the pedestal waveguides. Choosing an appropriate amount of these silicon nanostructures inside the rare-earth waveguides we achieve pump light scattering and at the same time very little scattering at the signal wavelength. The overall effect is again enhancement of 50% thus opening possibilities for potential applications in integrated optics.
dc.descriptionFunda????o de Amparo ?? Pesquisa do Estado de S??o Paulo (FAPESP)
dc.descriptionFAPESP: 17/10765-5; 13/26113-6
dc.rightsopenAccess
dc.subjectamplifiers
dc.subjectwaveguides
dc.subjectnanostructures
dc.subjectoptical equipment
dc.subjectoptical properties
dc.subjectsputtering
dc.subjectsilicides
dc.subjectsilicon compounds
dc.subjectscanning electron microscopy
dc.titleOptimization of BGO Er/Yb doped pedestal waveguide amplifiers with Si nanostructures
dc.typeTexto completo de evento
dc.coverageI


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