Quasi-three level Nd:YLF fundamental and Raman laser operating under 872-nm and 880-nm direct diode pumping

dc.contributorCLARKSON, W.A.
dc.contributorSHORI, RAMESH K.
dc.creatorWETTER, NIKLAUS U.
dc.creatorBERECZKI, ALLAN
dc.creatorPAES, JOAO P.F.
dc.creatorSOLID STATE LASERS XXVII: TECHNOLOGY AND DEVICES
dc.date2018-08-02T18:03:23Z
dc.date2018-08-02T18:03:23Z
dc.dateJanuary 27 - February 01, 2018
dc.date.accessioned2023-09-28T14:07:52Z
dc.date.available2023-09-28T14:07:52Z
dc.identifierhttp://repositorio.ipen.br/handle/123456789/29017
dc.identifier10.1117/12.2290444
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8999261
dc.descriptionNd:YLiF4 is the gain material of choice whenever outstanding beam quality or a birefringent gain material is necessary such as in certain applications for terahertz radiation or dual-frequency mode-locking. However, for high power CW applications the material is hampered by a low thermal fracture threshold. This problem can be mitigated by special 2D pump set-ups or by keeping the quantum defect to a minimum. Direct pumping into the upper laser level of Nd:YLiF4 is usually performed at 880 nm. For quasi-three level laser emission at 908 nm, direct pumping at this wavelength provides a high quantum defect of 0.97, which allows for very high CW pump powers. Although the direct pumping transition to the upper laser state at 872 nm has a slightly smaller quantum defect of 0.96, its pump absorption cross section along the c-axis is 50% higher than at 880 nm, leading to a higher absorption efficiency. In this work we explore, for the first time to our knowledge, 908 nm lasing under 872 nm diode pumping and compare the results with 880 nm pumping for quasicw and cw operation. By inserting a KGW crystal in the cavity, Raman lines at 990 nm and 972 nm were obtained for the first time from a directly pumped 908 nm Nd:YLF fundamental laser for both quasi-cw and cw conditions.
dc.descriptionConselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico (CNPq)
dc.descriptionFunda????o de Amparo ?? Pesquisa do Estado de S??o Paulo (FAPESP)
dc.descriptionCNPq: 401580/2012
dc.descriptionFAPESP: 12/11437-8
dc.format105111S-1 - 105111S7
dc.publisherSociety of Photo-optical Instrumentation Engineers
dc.relationSPIE Proceedings Series, 10511
dc.rightsopenAccess
dc.subjectlasers
dc.subjectpumping
dc.subjectresonators
dc.subjectraman spectra
dc.subjectsolid state lasers
dc.subjectdiode-pumped solid state lasers
dc.subjectneodymium lasers
dc.subjectyttrium fluorides
dc.subjectlithium fluorides
dc.subjectcrystals
dc.titleQuasi-three level Nd:YLF fundamental and Raman laser operating under 872-nm and 880-nm direct diode pumping
dc.typeTexto completo de evento
dc.coverageI
dc.localBellingham, WA, USA


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