On the capacitance-voltage modeling of strained quantum-well MODFET's

dc.creatorMANZOLI, J.E.
dc.creatorROMERO, M.A.
dc.creatorHIPOLITO, O.
dc.date1998
dc.date2014-07-31T11:32:55Z
dc.date2014-07-31T11:50:42Z
dc.date2014-07-31T11:32:55Z
dc.date2014-07-31T11:50:42Z
dc.date.accessioned2023-09-28T12:38:43Z
dc.date.available2023-09-28T12:38:43Z
dc.identifier0018-9197
dc.identifierhttp://repositorio.ipen.br/handle/123456789/7106
dc.identifier12
dc.identifier34
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8977355
dc.format2314-2320
dc.relationIEEE Journal of Quantum Electronics
dc.rightsopenAccess
dc.subjectfield effect transistors
dc.subjectsemiconductor devices
dc.subjectheterojunctions
dc.subjectsimulation
dc.subjectsimulators
dc.subjectcapacitance
dc.subjectelectric potential
dc.subjectmodulation
dc.subjecttransistors
dc.titleOn the capacitance-voltage modeling of strained quantum-well MODFET's
dc.typeArtigo de peri??dico
dc.coverageI


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