Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorBoratto, Miguel Henrique
dc.creatorScalvi, Luis Vicente de Andrade
dc.date2014-05-27T11:30:46Z
dc.date2016-10-25T18:54:35Z
dc.date2014-05-27T11:30:46Z
dc.date2016-10-25T18:54:35Z
dc.date2013-10-01
dc.date.accessioned2017-04-06T02:40:23Z
dc.date.available2017-04-06T02:40:23Z
dc.identifierCeramics International.
dc.identifier0272-8842
dc.identifierhttp://hdl.handle.net/11449/76700
dc.identifierhttp://acervodigital.unesp.br/handle/11449/76700
dc.identifier10.1016/j.ceramint.2013.09.041
dc.identifierWOS:000329882100155
dc.identifier2-s2.0-84884618771
dc.identifierhttp://dx.doi.org/10.1016/j.ceramint.2013.09.041
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/897391
dc.descriptionAlumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 °C is responsible for reasonable oxidation, which is accelerated up to 8 times for O2-rich atmosphere. Results of surface electrical resistivity and Raman spectroscopy are in good agreement with these findings. Surprisingly, X-ray and Raman data suggest also the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. © 2013 Elsevier Ltd and Techna Group S.r.l.
dc.languageeng
dc.relationCeramics International
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAlumina
dc.subjectOxidation
dc.subjectResistive evaporation
dc.subjectThermal annealing
dc.titleDeposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer
dc.typeOtro


Este ítem pertenece a la siguiente institución