Fabrication and optical properties of Strain-free Self-assembled Mesoscopic GaAs structures

dc.creatorSilva, Saimon Filipe Covre da
dc.creatorMardegan, Thayná
dc.creatorAraújo, Sidnei Ramis de
dc.creatorRamirez, Carlos Alberto Ospina
dc.creatorKiravittaya, Suwit
dc.creatorCouto, Odilon D. D. Jr
dc.creatorIikawa, Fernando
dc.creatorDeneke, Christoph
dc.date2017-10-31T11:06:08Z
dc.date2017-10-31T11:06:08Z
dc.date2017-01-21
dc.date.accessioned2023-09-27T22:15:54Z
dc.date.available2023-09-27T22:15:54Z
dc.identifier1556276X
dc.identifierhttps://doi.org/10.1186/s11671-016-1782-1
dc.identifierhttp://www.locus.ufv.br/handle/123456789/12588
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8972879
dc.descriptionWe use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 μm and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.
dc.formatpdf
dc.formatapplication/pdf
dc.languageeng
dc.publisherNanoscale Research Letters
dc.relation12:61, Jan. 2017
dc.rightsOpen Access
dc.subjectStrain-free quantum dots
dc.subjectLocal hole etching
dc.subjectGa-assisted deoxidation
dc.subjectMolecular beam epitaxy
dc.titleFabrication and optical properties of Strain-free Self-assembled Mesoscopic GaAs structures
dc.typeArtigo


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