Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

dc.creatorAziz, Mohsin
dc.creatorFelix, Jorlandio F.
dc.creatorJameel, Dler
dc.creatorAl Saqri, Noor
dc.creatorAl Mashary, Faisal S.
dc.creatorAlghamdi, Haifaa M.
dc.creatorAlbalawi, Hind M.A.
dc.creatorTaylor, David
dc.creatorHenini, Mohamed
dc.date2018-09-11T18:12:01Z
dc.date2018-09-11T18:12:01Z
dc.date2015-12
dc.date.accessioned2023-09-27T22:10:55Z
dc.date.available2023-09-27T22:10:55Z
dc.identifier07496036
dc.identifierhttps://doi.org/10.1016/j.spmi.2015.08.028
dc.identifierhttp://www.locus.ufv.br/handle/123456789/21757
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8971790
dc.descriptionThe effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current–Voltage, Capacitance–Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.
dc.formatpdf
dc.formatapplication/pdf
dc.languageeng
dc.publisherSuperlattices and Microstructures
dc.relationv. 88, p. 80- 89, december 2015
dc.rightsElsevier Ltd.
dc.subjectRapid thermal annealing
dc.subjectFurnace annealing
dc.subjectIV
dc.subjectCV
dc.subjectDLTS
dc.titleRapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures
dc.typeArtigo


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