Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures

dc.creatorAziz, M.
dc.creatorMesli, A.
dc.creatorFelix, J.F.
dc.creatorJameel, D.
dc.creatorAl Saqri, N.
dc.creatorTaylor, D.
dc.creatorHenini, M.
dc.date2018-08-23T11:54:06Z
dc.date2018-08-23T11:54:06Z
dc.date2015-08-15
dc.date.accessioned2023-09-27T21:11:15Z
dc.date.available2023-09-27T21:11:15Z
dc.identifier00220248
dc.identifierhttps://doi.org/10.1016/j.jcrysgro.2015.04.039
dc.identifierhttp://www.locus.ufv.br/handle/123456789/21358
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8956172
dc.descriptionPost-growth annealing treatments in the range 400–600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density–voltage (J–V), Capacitance–voltage (C–V), capacitance–frequency (C–F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.
dc.formatpdf
dc.formatapplication/pdf
dc.languageeng
dc.publisherJournal of Crystal Growth
dc.relationv. 424, p. 5- 10, august 2015
dc.rightsElsevier B.V.
dc.subjectA1. Defects
dc.subjectA1. EL2
dc.subjectA1. Interfacial misfit
dc.subjectB1. Gallium arsenide
dc.titleEffect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
dc.typeArtigo


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