| dc.creator | Leal, F.F. | |
| dc.creator | Ferreira, S.O. | |
| dc.creator | Menezes-Sobrinho, I.L. | |
| dc.creator | Faria, T.E. | |
| dc.date | 2018-04-20T14:17:05Z | |
| dc.date | 2018-04-20T14:17:05Z | |
| dc.date | 2004-12-10 | |
| dc.date.accessioned | 2023-09-27T20:43:36Z | |
| dc.date.available | 2023-09-27T20:43:36Z | |
| dc.identifier | 17426596 | |
| dc.identifier | https://doi.org/10.1088/0953-8984/17/1/003 | |
| dc.identifier | http://www.locus.ufv.br/handle/123456789/18942 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/8946452 | |
| dc.description | Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 μm. The surface morphology of the samples was studied by
measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness
exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100). | |
| dc.format | pdf | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Journal of Physics | |
| dc.relation | v. 17, n. 1, p. 27–32, jan. 2005 | |
| dc.rights | IOP Publishing Ltd | |
| dc.subject | Roughness of CdTe | |
| dc.subject | Hot wall epitaxy | |
| dc.title | Roughness of CdTe thin films grown on glass by hot wall epitaxy | |
| dc.type | Artigo | |
