dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorMorais, E. A.
dc.creatorScalvi, Luis Vicente de Andrade
dc.creatorRavaro, L. P.
dc.creatorLi, Siu M.
dc.creatorFloriano, E. A.
dc.date2014-05-27T11:24:51Z
dc.date2016-10-25T18:30:29Z
dc.date2014-05-27T11:24:51Z
dc.date2016-10-25T18:30:29Z
dc.date2010-12-01
dc.date.accessioned2017-04-06T01:44:11Z
dc.date.available2017-04-06T01:44:11Z
dc.identifierJournal of Physics: Conference Series, v. 249.
dc.identifier1742-6588
dc.identifier1742-6596
dc.identifierhttp://hdl.handle.net/11449/72009
dc.identifierhttp://acervodigital.unesp.br/handle/11449/72009
dc.identifier10.1088/1742-6596/249/1/012005
dc.identifier2-s2.0-78651071384
dc.identifierhttp://dx.doi.org/10.1088/1742-6596/249/1/012005
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/892919
dc.descriptionPhotoluminescence and photo-excited conductivity data as well as structural analysis are presented for sol-gel SnO2 thin films doped with rare earth ions Eu3+ and Er3+, deposited by sol-gel-dip-coating technique. Photoluminescence spectra are obtained under excitation with various types of monochromatic light sources, such as Kr+, Ar+ and Nd:YAG lasers, besides a Xe lamp plus a selective monochromator with UV grating. The luminescence fine structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at the asymmetric grain boundary layer sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference in the capture energy is not so evident in these materials with nanoscocopic crystallites, even though the luminescence spectra are rather distinct. It seems that grain boundary scattering plays a major role in Eu-doped SnO2 films. Structural evaluation helps to interpret the electro-optical data. © 2010 IOP Publishing Ltd.
dc.languageeng
dc.relationJournal of Physics: Conference Series
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectConductivity data
dc.subjectDip coating techniques
dc.subjectDoped films
dc.subjectElectro-optical
dc.subjectEr-doped
dc.subjectFine structures
dc.subjectGrain boundary scattering
dc.subjectLuminescence spectrum
dc.subjectMonochromatic light
dc.subjectND : YAG lasers
dc.subjectPhotoluminescence spectrum
dc.subjectRare earth ions
dc.subjectRare-earth doping
dc.subjectStructural evaluation
dc.subjectTrapping rate
dc.subjectTrivalent ion
dc.subjectXe lamp
dc.subjectBuilding materials
dc.subjectDefects
dc.subjectDoping (additives)
dc.subjectErbium
dc.subjectEuropium
dc.subjectGels
dc.subjectGrain boundaries
dc.subjectGrain size and shape
dc.subjectInsulating materials
dc.subjectKrypton
dc.subjectLight sources
dc.subjectMetal ions
dc.subjectMonochromators
dc.subjectNeodymium lasers
dc.subjectPhotoluminescence
dc.subjectSol-gel process
dc.subjectSol-gels
dc.subjectSols
dc.subjectStructural analysis
dc.subjectTransport properties
dc.subjectXenon
dc.subjectFilms
dc.titleOptical and transport properties of rare-earth trivalent ions located at different sites in sol-gel SnO2
dc.typeOtro


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