Universal conductance for the Anderson model

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorOliveira, L. N.
dc.creatorYoshida, M.
dc.creatorSeridonio, A. C.
dc.date2014-05-27T11:24:48Z
dc.date2016-10-25T18:29:07Z
dc.date2014-05-27T11:24:48Z
dc.date2016-10-25T18:29:07Z
dc.date2010-09-30
dc.date.accessioned2017-04-06T01:43:02Z
dc.date.available2017-04-06T01:43:02Z
dc.identifierJournal of Physics: Conference Series, v. 200, n. SECTION 5, 2010.
dc.identifier1742-6588
dc.identifier1742-6596
dc.identifierhttp://hdl.handle.net/11449/71889
dc.identifierhttp://acervodigital.unesp.br/handle/11449/71889
dc.identifier10.1088/1742-6596/200/5/052020
dc.identifier2-s2.0-77957036548
dc.identifierhttp://dx.doi.org/10.1088/1742-6596/200/5/052020
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/892814
dc.descriptionWe discuss the thermal dependence of the zero-bias electrical conductance for a quantum dot embedded in a quantum wire, or side-coupled to it. In the Kondo regime, the temperature-dependent conductances map linearly onto the conductance for the symmetric Anderson Hamiltonian. The mapping fits accurately numerical renormalization-group results for the conductance in each geometry. In the side-coupled geometry, the conductance is markedly affected by a gate potential applied to the wire; in the embedded geometry, it is not. © 2010 IOP Publishing Ltd.
dc.languageeng
dc.relationJournal of Physics: Conference Series
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAnderson Hamiltonian
dc.subjectAnderson models
dc.subjectElectrical conductance
dc.subjectGate potentials
dc.subjectKondo regime
dc.subjectQuantum Dot
dc.subjectQuantum wires
dc.subjectRenormalization group
dc.subjectTemperature dependent
dc.subjectThermal dependences
dc.subjectZero-bias
dc.subjectWire
dc.subjectComputational geometry
dc.titleUniversal conductance for the Anderson model
dc.typeOtro


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