Magnetoelectric coefficient in strontium ruthenate buffered lanthanum modified bismuth ferrite thin films grown by chemical method

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorSimões, Alexandre Zirpoli
dc.creatorGarcia, Filiberto Gonzalez
dc.creatorMoura, Francisco
dc.date2014-05-27T11:24:04Z
dc.date2016-10-25T18:27:48Z
dc.date2014-05-27T11:24:04Z
dc.date2016-10-25T18:27:48Z
dc.date2009-12-01
dc.date.accessioned2017-04-06T01:38:33Z
dc.date.available2017-04-06T01:38:33Z
dc.identifierJournal of Scanning Probe Microscopy, v. 4, n. 2, p. 94-99, 2009.
dc.identifier1557-7937
dc.identifierhttp://hdl.handle.net/11449/71315
dc.identifierhttp://acervodigital.unesp.br/handle/11449/71315
dc.identifier10.1166/jspm.2009.1014
dc.identifier2-s2.0-77951776270
dc.identifierhttp://dx.doi.org/10.1166/jspm.2009.1014
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/892317
dc.descriptionThis paper focuses on the magnetoelectric coupling (ME) at room temperature in lanthanum modified bismuth ferrite thin film (BLFO) deposited on SrRuO 3-buffered Pt/TiO 2/SiO 2/Si(100) substrates by the soft chemical method. BLFO film was coherently grown at a temperature of 500 °C. The magnetoelectric coefficient measurement was performed to evidence magnetoelectric coupling behavior. Room temperature magnetic coercive field indicates that the film is magnetically soft. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cmOe. Dielectric permittivity and dielectric loss demonstrated only slight dispersion with frequency due the less two-dimensional stress in the plane of the film. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning. We observed that various types of domain behavior such as 71 ° and 180° domain switching, and pinned domain formation occurred. Copyright © 2009 American Scientific Publishers All rights reserved.
dc.languageeng
dc.relationJournal of Scanning Probe Microscopy
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCeramics
dc.subjectChemical syntheses
dc.subjectDieletric response
dc.subjectMultiferroics
dc.subjectPiezoelectric force microscopy
dc.subjectPiezoelectricity
dc.subjectBismuth ferrites
dc.subjectChemical method
dc.subjectChemical synthesis
dc.subjectCoercive field
dc.subjectDC voltage
dc.subjectDielectric permittivities
dc.subjectDomain behavior
dc.subjectDomain formation
dc.subjectDomain switchings
dc.subjectLongitudinal direction
dc.subjectMagnetoelectric coefficients
dc.subjectMagnetoelectric couplings
dc.subjectPolarization reversals
dc.subjectRoom temperature
dc.subjectSi (100) substrate
dc.subjectSoft chemical method
dc.subjectStrontium ruthenates
dc.subjectTwo-dimensional stress
dc.subjectBismuth
dc.subjectCeramic materials
dc.subjectCrystallography
dc.subjectDielectric losses
dc.subjectElectric force microscopy
dc.subjectElectromagnetic coupling
dc.subjectFerrite
dc.subjectLanthanum
dc.subjectLanthanum alloys
dc.subjectMagnetic domains
dc.subjectPiezoelectric devices
dc.subjectSilicon compounds
dc.subjectStrontium
dc.subjectSynthesis (chemical)
dc.subjectThin films
dc.subjectComposite micromechanics
dc.titleMagnetoelectric coefficient in strontium ruthenate buffered lanthanum modified bismuth ferrite thin films grown by chemical method
dc.typeOtro


Este ítem pertenece a la siguiente institución