| dc.contributor | Universidade Estadual Paulista (UNESP) | |
| dc.creator | Araújo, E. B. | |
| dc.creator | Eiras, J. A. | |
| dc.date | 2014-05-27T11:20:23Z | |
| dc.date | 2016-10-25T18:17:31Z | |
| dc.date | 2014-05-27T11:20:23Z | |
| dc.date | 2016-10-25T18:17:31Z | |
| dc.date | 2002-01-01 | |
| dc.date.accessioned | 2017-04-06T01:01:29Z | |
| dc.date.available | 2017-04-06T01:01:29Z | |
| dc.identifier | Ferroelectrics, v. 270, p. 51-56. | |
| dc.identifier | 0015-0193 | |
| dc.identifier | 1563-5112 | |
| dc.identifier | http://hdl.handle.net/11449/66760 | |
| dc.identifier | http://acervodigital.unesp.br/handle/11449/66760 | |
| dc.identifier | 10.1080/00150190211254 | |
| dc.identifier | WOS:000176862200010 | |
| dc.identifier | 2-s2.0-33746290172 | |
| dc.identifier | http://dx.doi.org/10.1080/713716104 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/888283 | |
| dc.description | Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In this study, a small concentration of Nb (5 mol%) was selected as substitute of B-site in ABO 3 structure of PZT. Dielectric and ferroelectric properties of PZT films were studied as a function of cation-substitution. Results for Nb-PZT were compared with PZT films undoped. The values of dielectric constant, at typical 100 kHz frequency, were 358 and 137, for PZT and Nb-PZT films respectively. Remanent polarizations of these films were respectively 7.33 μ C/cm 2 and 13.3 μ C/cm 2 , while the measured coercive fields were 101 kV/cm and 93 kV/cm. As a result, changes on observed dielectric and ferroelectric values confirm the Nb substitution in PZT thin film produced by oxide precursor method. © 2002 Taylor & Francis. | |
| dc.language | eng | |
| dc.relation | Ferroelectrics | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.subject | Ferroelectric | |
| dc.subject | PZT | |
| dc.subject | Thin films | |
| dc.subject | Dielectric properties | |
| dc.subject | Ferroelectricity | |
| dc.subject | Lead compounds | |
| dc.subject | Permittivity | |
| dc.subject | Polarization | |
| dc.subject | Substitution reactions | |
| dc.subject | Cation-substitution | |
| dc.subject | Oxide precursor method | |
| dc.subject | Remanent polarizations | |
| dc.title | Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method | |
| dc.type | Otro | |
