Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorMessias, Fabio R.
dc.creatorScalvi, Luis V.A.
dc.creatorSiu Li, M.
dc.creatorSantilli, C. V.
dc.creatorPulcinelli, S. H.
dc.date2014-05-27T11:19:48Z
dc.date2016-10-25T18:15:59Z
dc.date2014-05-27T11:19:48Z
dc.date2016-10-25T18:15:59Z
dc.date1999-12-01
dc.date.accessioned2017-04-06T00:55:16Z
dc.date.available2017-04-06T00:55:16Z
dc.identifierRadiation Effects and Defects in Solids, v. 150, n. 1-4, p. 391-395, 1999.
dc.identifier1042-0150
dc.identifierhttp://hdl.handle.net/11449/65932
dc.identifierhttp://acervodigital.unesp.br/handle/11449/65932
dc.identifier10.1080/10420159908226263
dc.identifierWOS:000088130800065
dc.identifier2-s2.0-0033346759
dc.identifierhttp://dx.doi.org/10.1080/10420159908226263
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/887584
dc.descriptionSince oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
dc.languageeng
dc.relationRadiation Effects and Defects in Solids
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectOxygen
dc.subjectPhotoconductivity
dc.subjectSol-gel
dc.subjectTin dioxide
dc.subjectVacancy
dc.subjectCoating techniques
dc.subjectComposition
dc.subjectElectric properties
dc.subjectElectron transitions
dc.subjectMetal vapor lamps
dc.subjectOxides
dc.subjectSol-gels
dc.subjectThin films
dc.subjectTin compounds
dc.subjectDip coating sol-gel technique
dc.subjectOxygen vacancies
dc.subjectPhotoconductivity dependence
dc.subjectCrystal defects
dc.titleOxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources
dc.typeOtro


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