Improved Conductivity Induced by Photodesorption in SnO2 Thin Films Grown by a Sol-Gel Dip Coating Technique

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorScalvi, Luis Vicente de Andrade
dc.creatorMessias, Fábio R.
dc.creatorSouza, A. E.
dc.creatorLi, M. Siu
dc.creatorSantilli, C. V.
dc.creatorPulcinelli, S. H.
dc.date2014-05-27T11:19:48Z
dc.date2016-10-25T18:15:58Z
dc.date2014-05-27T11:19:48Z
dc.date2016-10-25T18:15:58Z
dc.date1999-12-01
dc.date.accessioned2017-04-06T00:55:13Z
dc.date.available2017-04-06T00:55:13Z
dc.identifierJournal of Sol-Gel Science and Technology, v. 13, n. 1-3, p. 793-798, 1999.
dc.identifier0928-0707
dc.identifierhttp://hdl.handle.net/11449/65923
dc.identifierhttp://acervodigital.unesp.br/handle/11449/65923
dc.identifier10.1023/A:1008634131282
dc.identifierWOS:000078468200140
dc.identifier2-s2.0-0032312616
dc.identifierhttp://dx.doi.org/10.1023/A:1008634131282
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/887577
dc.descriptionThin films of undoped and Sb-doped SnO2 have been prepared by a sol-gel dip-coating technique. For the high doping level (2-3 mol% Sb) n-type degenerate conduction is expected, however, measurements of resistance as a function of temperature show that doped samples exhibit strong electron trapping, with capture levels at 39 and 81 meV. Heating in a vacuum and irradiation with UV monochromatic light (305 nm) improve the electrical characteristics, decreasing the carrier capture at low temperature. This suggests an oxygen related level, which can be eliminated by a photodesorption process. Absorption spectral dependence indicates an indirect bandgap transition with Eg ≅ 3.5 eV. Current-voltage characteristics indicate a thermionic emission mechanism through interfacial states.
dc.languageeng
dc.relationJournal of Sol-Gel Science and Technology
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectElectronic transport
dc.subjectImpurities in semiconductors
dc.subjectRecombination and trapping
dc.subjectThin films
dc.subjectCharge carriers
dc.subjectCurrent voltage characteristics
dc.subjectDesorption
dc.subjectElectric resistance measurement
dc.subjectElectron transport properties
dc.subjectEnergy gap
dc.subjectSemiconducting antimony
dc.subjectSemiconducting tin compounds
dc.subjectSemiconductor doping
dc.subjectSol-gels
dc.subjectThermal effects
dc.subjectUltraviolet radiation
dc.subjectAbsorption spectroscopy
dc.subjectApproximation theory
dc.subjectCoating techniques
dc.subjectMonochromators
dc.subjectSemiconductor materials
dc.subjectSingle crystals
dc.subjectDip coating
dc.subjectPhotodesorption
dc.subjectPhotodesorption process
dc.subjectSemiconducting films
dc.subjectTin compounds
dc.titleImproved Conductivity Induced by Photodesorption in SnO2 Thin Films Grown by a Sol-Gel Dip Coating Technique
dc.typeOtro


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