Photodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorMessias, Fábio R.
dc.creatorScalvi, Luis Vicente de Andrade
dc.creatorLi, M. Siu
dc.creatorSantilli, C. V.
dc.creatorPulcinelli, S. H.
dc.date2014-05-27T11:19:39Z
dc.date2016-10-25T18:15:23Z
dc.date2014-05-27T11:19:39Z
dc.date2016-10-25T18:15:23Z
dc.date1998-12-01
dc.date.accessioned2017-04-06T00:52:58Z
dc.date.available2017-04-06T00:52:58Z
dc.identifierRadiation Effects and Defects in Solids, v. 146, n. 1-4, p. 199-206, 1998.
dc.identifier1042-0150
dc.identifierhttp://hdl.handle.net/11449/65590
dc.identifierhttp://acervodigital.unesp.br/handle/11449/65590
dc.identifier10.1080/10420159808220291
dc.identifierWOS:000079993400017
dc.identifier2-s2.0-0032308896
dc.identifierhttp://dx.doi.org/10.1080/10420159808220291
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/887296
dc.descriptionThin films of undoped and Sb-doped (2 atg%) SnO2 have been prepared by sol-gel dip-coating technique on borosilicate glasses. Variation of photoconductivity excitation with wavelength and optical absorption indicate indirect bandgap transition with energy of ≅ 3.5 eV. Conductance as function of temperature indicates two levels of capture with 39 and 81 meV as activation energies, which may be related to an Sb donor and oxygen vacancy respectively. Electron trapping by these levels are practically destroyed by UV photoexcitation (305 nm) and heating in vacuum to 200°C. Gas analysis using a mass spectrometer indicates an oxygen related level, which may not be desorbed in the simpler O2 form.
dc.languageeng
dc.relationRadiation Effects and Defects in Solids
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectOptical absorption
dc.subjectOxygen vacancy
dc.subjectPhotoconductivity
dc.subjectTin dioxide
dc.subjectTraps
dc.subjectWide gap semiconductor
dc.subjectActivation energy
dc.subjectBorosilicate glass
dc.subjectCoating techniques
dc.subjectDesorption
dc.subjectElectric conductance
dc.subjectHeating
dc.subjectMass spectrometers
dc.subjectSemiconducting tin compounds
dc.subjectSemiconductor growth
dc.subjectSol-gels
dc.subjectThin films
dc.subjectUltraviolet radiation
dc.subjectElectron trapping
dc.subjectPhotodesorption
dc.subjectSol-gel dip-coating techniques
dc.subjectSemiconducting films
dc.titlePhotodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique
dc.typeOtro


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