Electrical properties of the SnO2-based varistor

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorPianaro, S. A.
dc.creatorBueno, Paulo Roberto
dc.creatorOlivi, P.
dc.creatorLongo, Elson
dc.creatorVarela, José Arana
dc.date2014-05-27T11:19:38Z
dc.date2016-10-25T18:15:21Z
dc.date2014-05-27T11:19:38Z
dc.date2016-10-25T18:15:21Z
dc.date1998-12-01
dc.date.accessioned2017-04-06T00:52:53Z
dc.date.available2017-04-06T00:52:53Z
dc.identifierJournal of Materials Science: Materials in Electronics, v. 9, n. 2, p. 159-165, 1998.
dc.identifier0957-4522
dc.identifierhttp://hdl.handle.net/11449/65576
dc.identifierhttp://acervodigital.unesp.br/handle/11449/65576
dc.identifier10.1023/A:1008821808693
dc.identifierWOS:000072708700012
dc.identifier2-s2.0-0032045617
dc.identifierhttp://dx.doi.org/10.1023/A:1008821808693
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/887285
dc.descriptionThe non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.
dc.languageeng
dc.relationJournal of Materials Science: Materials in Electronics
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCeramic materials
dc.subjectCrystal defects
dc.subjectCrystal microstructure
dc.subjectElectric conductivity
dc.subjectElectric field effects
dc.subjectElectric properties
dc.subjectElectron tunneling
dc.subjectGrain boundaries
dc.subjectMathematical models
dc.subjectScanning electron microscopy
dc.subjectSemiconducting tin compounds
dc.subjectX ray diffraction analysis
dc.subjectCobalt compounds
dc.subjectDoping (additives)
dc.subjectNiobium compounds
dc.subjectPhase composition
dc.subjectThermionic emission
dc.subjectTin compounds
dc.subjectAtomic defect model
dc.subjectNonlinear electrical properties
dc.subjectSchottky double barrier formation
dc.subjectVoltage barrier
dc.subjectDouble barrier formation
dc.subjectElectric conduction mechanism
dc.subjectTin dioxide
dc.subjectVaristors
dc.titleElectrical properties of the SnO2-based varistor
dc.typeOtro


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