dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorSantos, R. M.
dc.creatorTurri, R.
dc.creatorRangel, E. C.
dc.creatorda Cruz, N. C.
dc.creatorSchreiner, W.
dc.creatorDavanzo, C. U.
dc.creatorDurrant, S. F.
dc.creatorPan, F
dc.creatorChen,
dc.date2014-05-20T15:34:51Z
dc.date2016-10-25T18:11:10Z
dc.date2014-05-20T15:34:51Z
dc.date2016-10-25T18:11:10Z
dc.date2012-01-01
dc.date.accessioned2017-04-06T00:37:26Z
dc.date.available2017-04-06T00:37:26Z
dc.identifier18th International Vacuum Congress (ivc-18). Amsterdam: Elsevier B.V., v. 32, p. 48-57, 2012.
dc.identifier1875-3892
dc.identifierhttp://hdl.handle.net/11449/42667
dc.identifierhttp://acervodigital.unesp.br/handle/11449/42667
dc.identifier10.1016/j.phpro.2012.03.517
dc.identifierWOS:000310677500006
dc.identifierWOS000310677500006.pdf
dc.identifier0000-0002-4511-3768
dc.identifierhttp://dx.doi.org/10.1016/j.phpro.2012.03.517
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/885306
dc.descriptionDiverse amorphous hydrogenated carbon and similar films containing additional elements were produced by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Plasma Immersion Ion Implantation and Deposition (PIIID). Thus a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:O:Si were obtained, starting from the same feed gases, using both techniques. The same deposition system supplied with radiofrequency (RF) power was used to produce all the films. A cylindrical stainless steel chamber equipped with circular electrodes mounted horizontally was employed. RF power was fed to the upper electrode; substrates were placed on the lower electrode. For PIIID negative high tension pulses were also applied to the lower electrode. Raman spectroscopy confirmed that all the films are amorphous. Chemical characterization of each pair of films was undertaken using Infrared Reflection Absorption Spectroscopy and X-ray Photoelectron Spectroscopy. The former revealed the presence of specific structures, such as C-H, C-O, O-H. The latter allowed calculation of the ratio of hetero-atoms to carbon atoms in the films, e. g. F:C, N:C, and Si:C. Only relatively small differences in elemental composition were detected between films produced by the two methods. The deposition rate in PIIID is generally reduced in relation to that of PECVD; for a-C:H:Cl films the reduction factor is almost four.
dc.languageeng
dc.publisherElsevier B.V.
dc.relation18th International Vacuum Congress (ivc-18)
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectcarbonacous thin films
dc.subjectXPS
dc.subjectIRRAS
dc.subjectRaman spectroscopy
dc.titleDiverse Amorphous Carbonaceous Thin Films Obtained by Plasma Enhanced Chemical Vapor Deposition and Plasma Immersion Ion Implantation and Deposition
dc.typeOtro


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