Otro
Dielectric properties of pure and lanthanum modified bismuth titanate thin films
Registro en:
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 454, n. 1-2, p. 66-71, 2008.
0925-8388
10.1016/j.jallcom.2006.12.066
WOS:000255215000015
Autor
Simões, Alexandre Zirpoli
Pianno, R. F.
Riccardi, C. S.
Cavalcante, L. S.
Longo, Elson
Varela, José Arana
Resumen
We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.