Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorCavalcante, L. S.
dc.creatorSczancoski, J. C.
dc.creatorVicente, Fábio Simões de
dc.creatorFrabbro, M. T.
dc.creatorLi, M. Siu
dc.creatorVarela, José Arana
dc.creatorLongo, Elson
dc.date2014-05-20T15:31:06Z
dc.date2016-10-25T18:06:50Z
dc.date2014-05-20T15:31:06Z
dc.date2016-10-25T18:06:50Z
dc.date2009-01-01
dc.date.accessioned2017-04-06T00:20:34Z
dc.date.available2017-04-06T00:20:34Z
dc.identifierJournal of Sol-gel Science and Technology. Dordrecht: Springer, v. 49, n. 1, p. 35-46, 2009.
dc.identifier0928-0707
dc.identifierhttp://hdl.handle.net/11449/40333
dc.identifierhttp://acervodigital.unesp.br/handle/11449/40333
dc.identifier10.1007/s10971-008-1841-x
dc.identifierWOS:000261958100006
dc.identifierhttp://dx.doi.org/10.1007/s10971-008-1841-x
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/883120
dc.descriptionBa[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, field emission gun-scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM), Ultraviolet-visible (UV-vis) absorption spectroscopy, electrical and photoluminescence (PL) measurements. FEG-SEM and AFM micrographs showed that the microstructure and thickness of BZT thin films can be influenced by the processing times. Dielectric constant and dielectric loss of BZT thin films heat treated at 700 A degrees C were approximately 148 and 0.08 at 1 MHz, respectively. UV-vis absorption spectra suggested the presence of intermediary energy levels (shallow and deep holes) within the band gap of BZT thin films. PL behavior was explained through the optical band gap values associated to the visible light emission components.
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.languageeng
dc.publisherSpringer
dc.relationJournal of Sol-Gel Science and Technology
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMicrostructure
dc.subjectDielectric
dc.subjectOptical band gap
dc.subjectPhotoluminescence
dc.subjectBZT thin films
dc.titleMicrostructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films
dc.typeOtro


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