Ferroelectric materials with photoluminescent properties

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorBouquet, V
dc.creatorVasconcelos, NSLS
dc.creatorAguiar, R.
dc.creatorPinheiro, C. D.
dc.creatorLeite, E. R.
dc.creatorPizzani, P. S.
dc.creatorVarela, P. A.
dc.creatorLongo, Elson
dc.creatorBoschi, T. M.
dc.creatorLanciotti, F.
dc.creatorMachado, MAC
dc.date2014-05-20T15:29:42Z
dc.date2016-10-25T18:04:57Z
dc.date2014-05-20T15:29:42Z
dc.date2016-10-25T18:04:57Z
dc.date2003-01-01
dc.date.accessioned2017-04-06T00:13:04Z
dc.date.available2017-04-06T00:13:04Z
dc.identifierFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 288, p. 315-326, 2003.
dc.identifier0015-0193
dc.identifierhttp://hdl.handle.net/11449/39216
dc.identifierhttp://acervodigital.unesp.br/handle/11449/39216
dc.identifier10.1080/00150190390211116
dc.identifierWOS:000184491100029
dc.identifierhttp://dx.doi.org/10.1080/00150190390211116
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/882152
dc.descriptionAmorphous LiNbO3 thin films processed by polymeric precursor method exhibited efficient luminescence at room temperature. The films were deposited on silicon substrates and treated at 200degreesC for different times. The photoluminescence emission yield decreases with the increase of the treatment time and disappears for crystalline films. A theoretical-experimental study was performed on amorphous and crystalline materials to understand the influence of the defects on the photoluminescence properties. The theoretical band gap obtained by the difference of energy between the HOMO and LUMO levels is larger for crystalline structure when compared with amorphous material. This result, which is in agreement with experimental band gaps obtained from optical measurements, revealed the emergence of new electronic levels for the amorphous material, which are localized in the wide band gap of the crystalline structure. These new electronic levels may explain the photoluminescence observed at room temperature for LiNbO3 amorphous films.
dc.languageeng
dc.publisherTaylor & Francis Ltd
dc.relationFerroelectrics
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectLiNbO3
dc.subjectamorphous thin films
dc.subjectphotoluminescence
dc.subjectPechini
dc.titleFerroelectric materials with photoluminescent properties
dc.typeOtro


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