Efficiency analysis of a modular H-bridge based on SiC MOSFET

dc.contributorUniversidad Nacional de Asunción - Facultad de Ingeniería
dc.contributorUniversidad de Talca - Department of Electrical Engineering (CL)
dc.creatorPacher Vega, Julio Cesar
dc.creatorRodas Benítez, Jorge Esteban
dc.creatorGregor Recalde, Raul Igmar
dc.creatorRivera, Marco
dc.creatorRenault, Alfredo
dc.creatorComparatore Franco, Leonardo David
dc.date2022-04-24T17:17:03Z
dc.date2022-04-24T17:17:03Z
dc.date2018
dc.date.accessioned2023-09-25T13:29:46Z
dc.date.available2023-09-25T13:29:46Z
dc.identifierhttp://hdl.handle.net/20.500.14066/3401
dc.identifierhttps://doi.org/10.1080/21681724.2018.1426111
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8806310
dc.descriptionSeveral new high-performance power semiconductors have appeared during the last decade, being the silicon carbide (SiC) MOSFETs the most promising to be commercialised as an alternative of Si IGBT. This paper presents the performance analysis of a controller for a full H-bridge based on SiC MOSFET technology used for high frequency and medium voltage applications. The switching performance of a modular H-bridge is analysed and the efficiency/losses and temperature dissipation are experimentally measured in order to help engineers to design and develop circuits using this power semiconductor. A comparison between SiC MOSFET and Si MOSFET is also presented.
dc.descriptionCONACYT – Consejo Nacional de Ciencia y Tecnología
dc.descriptionPROCIENCIA
dc.languageeng
dc.relation14-INV-096
dc.rightsopen access
dc.rights© 2018 Informa UK Limited, trading as Taylor & Francis Group
dc.subject5 Energía
dc.subjectMODULAR H-BRIDGE
dc.subjectSIC-MOSFET
dc.subjectEFFICIENCY ANALYSIS
dc.subjectINGENIERIA
dc.titleEfficiency analysis of a modular H-bridge based on SiC MOSFET
dc.typeresearch article


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