Electrical characterization of in situ polymerized polyaniline thin films

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorTravain, S. A.
dc.creatorFerreira, G. F. Leal
dc.creatorGiacometti, J. A.
dc.creatorBianchi, R. F.
dc.date2014-05-20T15:26:42Z
dc.date2016-10-25T18:01:20Z
dc.date2014-05-20T15:26:42Z
dc.date2016-10-25T18:01:20Z
dc.date2007-10-25
dc.date.accessioned2017-04-05T23:58:15Z
dc.date.available2017-04-05T23:58:15Z
dc.identifierMaterials Science and Engineering B-solid State Materials For Advanced Technology. Lausanne: Elsevier B.V. Sa, v. 143, n. 1-3, p. 31-37, 2007.
dc.identifier0921-5107
dc.identifierhttp://hdl.handle.net/11449/36809
dc.identifierhttp://acervodigital.unesp.br/handle/11449/36809
dc.identifier10.1016/j.mseb.2007.07.071
dc.identifierWOS:000251203000006
dc.identifierhttp://dx.doi.org/10.1016/j.mseb.2007.07.071
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/880247
dc.descriptionThe alternating conductivity, sigma*(f) = sigma'(f) + i sigma ''(f), of in situ polymerized polyaniline thin films doped with hydrochloric acid, deposited on top of an interdigitated gold line array previously deposited on glass substrates, were measured in the frequency (f) range between 0.1 Hz to 10 MHz and in the temperature range from 100 to 430 K. The results for sigma'(f) are typical of a disordered solid material: for frequencies lower than a certain hopping frequency gamma(hop), log[sigma'(f)] is frequency-independent rising almost linearly for in logf > gamma(hop). A master curve was thus obtained by plotting the real component of the conductivity using normalized scales sigma'(f)/sigma(dc) and f/gamma(hop) which is indicative of a single process operating in the whole frequency range. An expression encompassing the conduction through a disordered structure taken from previous random free energy barrier model for hopping carriers, as well a dielectric function to represent the capacitive behavior of the PAni was employed to fit the experimental results. The dielectric constant and activation energy for hopping carriers were obtained as function of the polymer doping level. (c) 2007 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationMaterials Science and Engineering B-solid State Materials For Advanced Technology
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectpolyaniline
dc.subjectin situ polymerization
dc.subjectelectrical properties
dc.subjectimpedance spectroscopy
dc.titleElectrical characterization of in situ polymerized polyaniline thin films
dc.typeOtro


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