Otro
Influence of Ta2O5 on the electrical properties of ZnO- and CoO-doped SnO2 varistors
Registro en:
Ceramics International. Oxford: Elsevier B.V., v. 30, n. 8, p. 2277-2281, 2004.
0272-8842
10.1016/j.ceramint.2004.01.007
WOS:000225753600033
Autor
Filho, F. M.
Simoes, A. Z.
Ries, A.
Silva, I. P.
Perazolli, L.
Longo, Elson
Varela, José Arana
Resumen
SnO2-based varistors doped with 0.5% cobalt, 0.5% zinc and various tantalum amounts were prepared by the solid-state route. Experimental evidence shows that small quantities of Ta2O5 improve the nonlinear properties of the samples significantly. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1050 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.