Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorVilcarromero, J.
dc.creatorBustamante, R.
dc.creatorSilva, José Humberto Dias da
dc.date2014-05-20T15:23:16Z
dc.date2016-10-25T17:57:11Z
dc.date2014-05-20T15:23:16Z
dc.date2016-10-25T17:57:11Z
dc.date2006-09-01
dc.date.accessioned2017-04-05T23:41:12Z
dc.date.available2017-04-05T23:41:12Z
dc.identifierBrazilian Journal of Physics. São Paulo: Sociedade Brasileira Fisica, v. 36, n. 3B, p. 1035-1037, 2006.
dc.identifier0103-9733
dc.identifierhttp://hdl.handle.net/11449/34093
dc.identifierhttp://acervodigital.unesp.br/handle/11449/34093
dc.identifier10.1590/S0103-97332006000600063
dc.identifierS0103-97332006000600063
dc.identifierWOS:000242535600062
dc.identifierWOS000242535600062.pdf
dc.identifierhttp://dx.doi.org/10.1590/S0103-97332006000600063
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/878086
dc.descriptionWe investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E-04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10(-5) (Omega.cm)(-1). Hydrogen was incorporated in the films by the introduction of an electronically controlled H-2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network.
dc.languageeng
dc.publisherSociedade Brasileira Fisica
dc.relationBrazilian Journal of Physics
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjecthydrogen
dc.subjectgallium arsenide
dc.subjectrf-magnetron sputtering
dc.titleHydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
dc.typeOtro


Este ítem pertenece a la siguiente institución