dc.contributor | Universidade Estadual Paulista (UNESP) | |
dc.creator | Vilcarromero, J. | |
dc.creator | Bustamante, R. | |
dc.creator | Silva, José Humberto Dias da | |
dc.date | 2014-05-20T15:23:16Z | |
dc.date | 2016-10-25T17:57:11Z | |
dc.date | 2014-05-20T15:23:16Z | |
dc.date | 2016-10-25T17:57:11Z | |
dc.date | 2006-09-01 | |
dc.date.accessioned | 2017-04-05T23:41:12Z | |
dc.date.available | 2017-04-05T23:41:12Z | |
dc.identifier | Brazilian Journal of Physics. São Paulo: Sociedade Brasileira Fisica, v. 36, n. 3B, p. 1035-1037, 2006. | |
dc.identifier | 0103-9733 | |
dc.identifier | http://hdl.handle.net/11449/34093 | |
dc.identifier | http://acervodigital.unesp.br/handle/11449/34093 | |
dc.identifier | 10.1590/S0103-97332006000600063 | |
dc.identifier | S0103-97332006000600063 | |
dc.identifier | WOS:000242535600062 | |
dc.identifier | WOS000242535600062.pdf | |
dc.identifier | http://dx.doi.org/10.1590/S0103-97332006000600063 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/878086 | |
dc.description | We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E-04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10(-5) (Omega.cm)(-1). Hydrogen was incorporated in the films by the introduction of an electronically controlled H-2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network. | |
dc.language | eng | |
dc.publisher | Sociedade Brasileira Fisica | |
dc.relation | Brazilian Journal of Physics | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.subject | hydrogen | |
dc.subject | gallium arsenide | |
dc.subject | rf-magnetron sputtering | |
dc.title | Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique | |
dc.type | Otro | |