The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorSimoes, A. Z.
dc.creatorRiccardi, C. S.
dc.creatorQuinelato, C.
dc.creatorRies, A.
dc.creatorLongo, Elson
dc.creatorVarela, José Arana
dc.date2014-05-20T15:22:48Z
dc.date2016-10-25T17:56:35Z
dc.date2014-05-20T15:22:48Z
dc.date2016-10-25T17:56:35Z
dc.date2004-11-15
dc.date.accessioned2017-04-05T23:38:41Z
dc.date.available2017-04-05T23:38:41Z
dc.identifierMaterials Science and Engineering B-solid State Materials For Advanced Technology. Lausanne: Elsevier B.V. Sa, v. 113, n. 3, p. 207-214, 2004.
dc.identifier0921-5107
dc.identifierhttp://hdl.handle.net/11449/33721
dc.identifierhttp://acervodigital.unesp.br/handle/11449/33721
dc.identifier10.1016/j.mseb.2004.08.004
dc.identifierWOS:000224946000006
dc.identifierhttp://dx.doi.org/10.1016/j.mseb.2004.08.004
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/877784
dc.descriptionPure and lanthanum-doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. The spin-coated films were specular and crack-free and crystalline after annealing at 700 degreesC for 2 h. Crystallinity and morphological evaluation were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystalline layer route present a dense microstructure with spherical grains. Films obtained using the intermediate-amorphous layer, present elongated grains around 250 nm in size. The dielectric and ferroelectric properties of the lanthanum-doped Bi4Ti3O12 films are strongly affected by the crystallization route. The hysteresis loops are fully saturated with a remnant polarization and drive voltage of the films, heat-treated by the intermediate-crystalline (P-r = 20.2 muC/cm(2) and V = 1.35 V) and for the film heat-treated by amorphous route (P-r = 22.4 muC/cm(2) and V = 2.99 V). (C) 2004 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationMaterials Science and Engineering B-solid State Materials For Advanced Technology
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectceramics
dc.subjectelectrical measurements
dc.subjectfilm deposition
dc.subjectthin films
dc.titleThe influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors
dc.typeOtro


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