Geometry effects on the electronic properties of multi-open dots structures

dc.contributorUniversidade Estadual de Campinas (UNICAMP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.creatorFagotto, EAM
dc.creatorRossi, S. M.
dc.creatorMoschim, E.
dc.date2015-03-18T15:55:03Z
dc.date2015-03-18T15:55:03Z
dc.date1998-11-01
dc.date.accessioned2023-09-12T03:05:21Z
dc.date.available2023-09-12T03:05:21Z
dc.identifierhttp://dx.doi.org/10.1109/16.726657
dc.identifierIeee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998.
dc.identifier0018-9383
dc.identifierhttp://hdl.handle.net/11449/117065
dc.identifier10.1109/16.726657
dc.identifierWOS:000076754800015
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8766550
dc.descriptionIn this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.
dc.descriptionState Univ Campinas, Sch Elect & Comp Engn, BR-1308197 Campinas, Brazil
dc.format2361-2364
dc.languageeng
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.relationIeee Transactions On Electron Devices
dc.relation2.620
dc.relation0,839
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectquantum dots
dc.subjectquantum effect semiconductor devices
dc.subjectquantum wires
dc.subjectresonant tunneling devices
dc.titleGeometry effects on the electronic properties of multi-open dots structures
dc.typeArtigo


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