dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorBalzar, D.
dc.creatorRamakrishnan, P. A.
dc.creatorSpagnol, P.
dc.creatorMani, S.
dc.creatorHermann, A. M.
dc.creatorMatin, M. A.
dc.date2014-05-20T15:20:36Z
dc.date2016-10-25T17:53:46Z
dc.date2014-05-20T15:20:36Z
dc.date2016-10-25T17:53:46Z
dc.date2002-11-01
dc.date.accessioned2017-04-05T23:26:49Z
dc.date.available2017-04-05T23:26:49Z
dc.identifierJapanese Journal of Applied Physics Part 1-regular Papers Brief Communications & Review Papers. Tokyo: Japan Soc Applied Physics, v. 41, n. 11B, p. 6628-6632, 2002.
dc.identifier0021-4922
dc.identifierhttp://hdl.handle.net/11449/31874
dc.identifierhttp://acervodigital.unesp.br/handle/11449/31874
dc.identifier10.1143/JJAP.41.6628
dc.identifierWOS:000182730300004
dc.identifierhttp://dx.doi.org/10.1143/JJAP.41.6628
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/876333
dc.descriptionPristine, W and Mn 1% doped Ba(0.6)Sr(0.4)TiO(3) epitaxial thin films grown on the LaAlO(3) substrate were deposited by pulsed laser deposition (PLD). Dielectric and ferroelectric properties were determined by the capacitance measurements and X-ray diffraction was used to determine both residual elastic strains and defect-related inhomogeneous strains-by analyzing diffraction line shifts and line broadening, respectively. We found that both elastic and inhomogeneous strains are affected by doping. This strain correlates with the change in Curie-Weiss temperature and can qualitatively explain changes in dielectric loss. To explain the experimental findings, we model the dielectric and ferroelectric properties of interest in the framework of the Landau-Ginzburg-Devonshire thermodynamic theory. As expected, an, elastic-strain contribution due to the epilayer-substrate misfit has an important influence on the free-energy. However, additional terms that correspond to the defect-related inhomogeneous strain had to be introduced to fully explain the measurements.
dc.languageeng
dc.publisherJapan Soc Applied Physics
dc.relationJapanese Journal of Applied Physics Part 1-regular Papers Brief Communications & Review Papers
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectferroelectric thin films
dc.subjectstrain
dc.subjectdefects
dc.subjectCurie-Weiss temperature
dc.subjectbarium-strontium titanate
dc.titleInfluence of strains and defects on ferroelectric and dielectric properties of thin-film barium-strontium titanates
dc.typeOtro


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