Otro
Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method
Registro en:
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 493, n. 1-2, p. 158-162, 2010.
0925-8388
10.1016/j.jallcom.2009.12.113
WOS:000276054200041
Autor
Simões, Alexandre Zirpoli
Garcia, Filiberto Gonzalez
Riccardi, C. S.
Resumen
This paper focuses on the piezoresponse characteristics at room temperature in niobium modified bismuth ferrite thin films (BFN) deposited on Pt/TiO(2)/SiO(2)/Si (1 0 0) substrates by the soft chemical method. The obtained films were grown at a temperature of 500 degrees C. The Nb dopant is effective in improving electrical properties of BFO films. XPS results show a single-phase Nb-doped BFO thin films with a Fe(3+) valence state. It was found that Nb-doped BFO thin films exhibited good electrical properties, such as improved capacitance-voltage and high piezoeletric coefficient, indicating a promising material for use in future memories based on magnetic ferroelectrics. (C) 2009 Elsevier B.V. All rights reserved. Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)