Dependence of the nonlinear electrical behavior of SnO2-based varistors on Cr2O3 addition

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorFilho, F. M.
dc.creatorSimoes, A. Z.
dc.creatorRies, A.
dc.creatorPerazolli, L.
dc.creatorLongo, Elson
dc.creatorVarela, José Arana
dc.date2014-05-20T14:17:57Z
dc.date2016-10-25T17:40:15Z
dc.date2014-05-20T14:17:57Z
dc.date2016-10-25T17:40:15Z
dc.date2007-01-01
dc.date.accessioned2017-04-05T22:26:33Z
dc.date.available2017-04-05T22:26:33Z
dc.identifierCeramics International. Oxford: Elsevier B.V., v. 33, n. 2, p. 187-192, 2007.
dc.identifier0272-8842
dc.identifierhttp://hdl.handle.net/11449/25387
dc.identifierhttp://acervodigital.unesp.br/handle/11449/25387
dc.identifier10.1016/j.ceramint.2005.07.025
dc.identifierWOS:000244008300010
dc.identifierhttp://dx.doi.org/10.1016/j.ceramint.2005.07.025
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/870282
dc.descriptionTin dioxide varistors doped with Coo, ZnO, Ta2O5 and Cr2O3 were prepared by the mixed oxide method. Temperature dependent impedance spectroscopy revealed two different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O-2 species at the grain boundary interface. We show that Cr2O3 improves the varistor properties, generating sites for the adsorption of O' and O at the grain boundary region. The O' and O defects are truly responsible for the barrier formation at the grain boundary interface. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationCeramics International
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectvaristors
dc.subjecttin dioxide
dc.subjectimpedance spectroscopy
dc.titleDependence of the nonlinear electrical behavior of SnO2-based varistors on Cr2O3 addition
dc.typeOtro


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