dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorYoshida, M.
dc.creatorSeridonio, A. C.
dc.creatorOliveira, L. N.
dc.date2013-09-30T18:51:00Z
dc.date2014-05-20T14:16:42Z
dc.date2016-10-25T17:39:38Z
dc.date2013-09-30T18:51:00Z
dc.date2014-05-20T14:16:42Z
dc.date2016-10-25T17:39:38Z
dc.date2009-12-01
dc.date.accessioned2017-04-05T22:22:41Z
dc.date.available2017-04-05T22:22:41Z
dc.identifierPhysical Review B. College Pk: Amer Physical Soc, v. 80, n. 23, p. 22, 2009.
dc.identifier1098-0121
dc.identifierhttp://hdl.handle.net/11449/25025
dc.identifierhttp://acervodigital.unesp.br/handle/11449/25025
dc.identifier10.1103/PhysRevB.80.235317
dc.identifierWOS:000273228800078
dc.identifierWOS000273228800078.pdf
dc.identifierhttp://dx.doi.org/10.1103/PhysRevB.80.235317
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/869965
dc.descriptionThe thermal dependence of the zero-bias conductance for the single electron transistor is the target of two independent renormalization-group approaches, both based on the spin-degenerate Anderson impurity model. The first approach, an analytical derivation, maps the Kondo-regime conductance onto the universal conductance function for the particle-hole symmetric model. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. The second approach, a numerical renormalization-group computation of the conductance as a function the temperature and applied gate voltages offers a comprehensive view of zero-bias charge transport through the device. The first approach is exact in the Kondo regime; the second, essentially exact throughout the parametric space of the model. For illustrative purposes, conductance curves resulting from the two approaches are compared.
dc.languageeng
dc.publisherAmer Physical Soc
dc.relationPhysical Review B
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAnderson model
dc.subjectelectric admittance
dc.subjectKondo effect
dc.subjectrenormalisation
dc.subjectsingle electron transistors
dc.titleUniversal zero-bias conductance for the single-electron transistor
dc.typeOtro


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