| dc.contributor | Universidade Estadual Paulista (UNESP) | |
| dc.creator | Aramaki, E. A. | |
| dc.creator | de Moraes, M. B. | |
| dc.creator | Machida, M. | |
| dc.date | 2014-05-20T13:27:38Z | |
| dc.date | 2014-05-20T13:27:38Z | |
| dc.date | 2003-01-01 | |
| dc.date.accessioned | 2017-04-05T20:09:10Z | |
| dc.date.available | 2017-04-05T20:09:10Z | |
| dc.identifier | Plasma Physics. Melville: Amer Inst Physics, v. 669, p. 339-342, 2003. | |
| dc.identifier | 0094-243X | |
| dc.identifier | http://hdl.handle.net/11449/9150 | |
| dc.identifier | 10.1063/1.1593934 | |
| dc.identifier | WOS:000184031800084 | |
| dc.identifier | http://dx.doi.org/10.1063/1.1593934 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/857338 | |
| dc.description | The applicability of plasma shock wave for material processing was investigated using modified inverse Z-pinch device. Shock wave expanding speed and plasma spectral analysis were studied using an internal magnetic,probe and spatially collimated light spectroscopy. The material processing capability of the device was shown by many different surface analysis techniques such as AES, IRS, EPM and SEM. The interactions between a plasma shock wave of similar to4x10(6) cm/s speed with a Si substrate surface shows some ion implantation capability using a nitrogen plasma and thin film formation using a methane plasma. | |
| dc.language | eng | |
| dc.publisher | American Institute of Physics (AIP) | |
| dc.relation | Plasma Physics | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.title | Material processing by plasma shock wave generated in an inverse Z-pinch plasma expander | |
| dc.type | Otro | |
