Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs

dc.creatorCirne K.
dc.creatorSilveira M.A.G.
dc.creatorSantos R.B.B.
dc.creatorGimenez S.P.
dc.creatorBarbosa M.D.L.
dc.creatorTabacniks M.H.
dc.creatorAdded N.
dc.creatorMedina N.H.
dc.creatorDe Melo W.R.
dc.creatorSeixas Jr. L.E.
dc.creatorDe Lima J.A.
dc.date2019-08-19T23:47:18Z
dc.date2023-05-03T20:35:23Z
dc.date2019-08-19T23:47:18Z
dc.date2023-05-03T20:35:23Z
dc.date2012
dc.date.accessioned2023-08-24T12:07:06Z
dc.date.available2023-08-24T12:07:06Z
dc.identifierCirne, K.; Seixas, L.E.; de Lima, J.A.; Silveira, M.A.G.; Santos, R.B.B.; Gimenez, S.P.; Barbosa, M.D.L.; Tabacniks, M.H.; ADDED, N.; Medina, N.H.; De Melo, W.R.. Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 80-82, 2012.
dc.identifier0168-583X
dc.identifierhttps://hdl.handle.net/20.500.12032/88992
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8420986
dc.descriptionThe study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved.
dc.relationNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.rightsAcesso Restrito
dc.titleComparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
dc.typeArtigo de evento


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