| dc.creator | Cerdeira A. | |
| dc.creator | Aleman M.A. | |
| dc.creator | Pavanello M.A. | |
| dc.creator | Martino J.A. | |
| dc.creator | Vancaillie L. | |
| dc.creator | Flandre D. | |
| dc.date | 2019-08-19T23:45:08Z | |
| dc.date | 2023-05-03T20:35:33Z | |
| dc.date | 2019-08-19T23:45:08Z | |
| dc.date | 2023-05-03T20:35:33Z | |
| dc.date | 2005 | |
| dc.date.accessioned | 2023-08-24T11:58:27Z | |
| dc.date.available | 2023-08-24T11:58:27Z | |
| dc.identifier | CERDEIRA, Antonio; ALEMÁN, Miguel; PAVANELLO, Marcelo A.; MARTINO, João Antonio; VANCAILLIE, Laurent; FLANDRE, Denis. Advantages of the Graded-Channel SOI FD MOSFET for Application as a Quasi-Linear Resistor. I.E.E.E. Transactions on Electron Devices, v. 52, n. 5, p. 967-972, 2005. | |
| dc.identifier | 0018-9383 | |
| dc.identifier | https://hdl.handle.net/20.500.12032/89022 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/8420703 | |
| dc.description | In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications as on-resistance and nonlinear harmonic distortion, is supported by both measurements and simulations of conventional and graded-channel (GC) fully depleted silicon-on-insultor (SOI) MOSFETs. The quasi-linear current-voltage characteristics of GC transistors show a decrease of the on-resistance as the length of the low doped region in the channel is increased, as well as an improvement in the third-order harmonic distortion (HD3), when compared with conventional transistors. A method for full comparison between conventional and GC SOI MOSFETs is presented, considering HD3 evolution with on-resistance tuning under low voltage of operation. Results demonstrate the significant advantages provided by the asymmetrical long channel transistors. © 2005 IEEE. | |
| dc.relation | IEEE Transactions on Electron Devices | |
| dc.rights | Acesso Restrito | |
| dc.title | Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor | |
| dc.type | Artigo | |
