Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures

dc.creatorNOVO, CARLA
dc.creatorBUHLER, RUDOLF
dc.creatorBAPTISTA, JOAO
dc.creatorGIACOMINI, RENATO
dc.creatorAFZALIAN, ARYAN
dc.creatorFLANDRE, DENIS
dc.date2019-08-19T23:45:24Z
dc.date2023-05-03T20:37:49Z
dc.date2019-08-19T23:45:24Z
dc.date2023-05-03T20:37:49Z
dc.date2017
dc.date.accessioned2023-08-24T11:54:35Z
dc.date.available2023-08-24T11:54:35Z
dc.identifierNOVO, CARLA; BUHLER, RUDOLF; BAPTISTA, JOAO; GIACOMINI, RENATO; AFZALIAN, ARYAN; FLANDRE, DENIS. Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, v. 17, n. 6, p. 1641-1648, 2017.
dc.identifier1558-1748
dc.identifierhttps://hdl.handle.net/20.500.12032/89459
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8420608
dc.relationIEEE Sensors Journal
dc.rightsAcesso Restrito
dc.titleQuantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
dc.typeArtigo


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