Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation

dc.creatorNovo C.
dc.creatorGiacomini R.
dc.creatorAfzalian A.
dc.creatorFlandre D.
dc.date.accessioned2019-08-19T23:45:23Z
dc.date.accessioned2023-05-03T20:36:31Z
dc.date.accessioned2023-08-23T20:30:03Z
dc.date.available2019-08-19T23:45:23Z
dc.date.available2023-05-03T20:36:31Z
dc.date.available2023-08-23T20:30:03Z
dc.date.created2019-08-19T23:45:23Z
dc.date.created2023-05-03T20:36:31Z
dc.date.issued2013
dc.identifierNOVO, C.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D.. Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation. ECS Transactions (Online), v. 53, n. 5, p. 121-126, 2013.
dc.identifier1938-5862
dc.identifierhttps://hdl.handle.net/20.500.12032/89206
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8386736
dc.description.abstractThis paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the behavior of the device. The temperature influence was also analyzed in 300K to 500K range. In addition, by using two-dimensional numerical simulations, the intrinsic length (LI) was changed, with the purpose of predicting the performance of this photodetector in more advanced technologies. © The Electrochemical Society.
dc.relationECS Transactions
dc.rightsAcesso Restrito
dc.titleOperation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
dc.typeArtigo de evento


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