Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

dc.creatorJoshi, Sachin
dc.creatorKrug, Cristiano
dc.creatorHeh, Dawei
dc.creatorNa, Hoon Joo
dc.creatorHarris, Harlan R.
dc.creatorOh, Jung Woo
dc.creatorKirsch, Paul D.
dc.creatorMajhi, Prashant
dc.creatorLee, Byoung Hun
dc.creatorTseng, Hsing-Huang
dc.creatorJammy, Raj
dc.creatorLee, Jack C.
dc.creatorBanerjee, Sanjay K.
dc.date2011-01-29T06:00:39Z
dc.date2007
dc.identifier0741-3106
dc.identifierhttp://hdl.handle.net/10183/27607
dc.identifier000657153
dc.descriptionTo realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial Si deposition followed by selective oxidation and leads to one of the highest peak hole mobilities reported for unstrained surface channel pMOSFETs on Ge: 332 cm2 • V−1 • s−1 at 0.05 MV/cm—a 2× enhancement over the universal Si/SiO2 mobility. The devices show well-behaved output and transfer characteristics, an equivalent oxide thickness of 1.85 nm and an ION/IOFF ratio of 3 × 103 without detectable fast transient charging. The high hole mobility of these devices is attributed to adequate passivation of the Ge surface.
dc.formatapplication/pdf
dc.languageeng
dc.relationIEEE electron device letters. Vol. 28, no. 4 (Apr. 2007), p. 308-311
dc.rightsOpen Access
dc.subjectGermanium
dc.subjectHigh mobility
dc.subjectHigh-κ
dc.subjectMetal gate
dc.subjectpMOSFET
dc.subjectSurface passivation
dc.subjectGermânio
dc.subjectPropriedades dielétricas
dc.titleImproved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
dc.typeArtigo de periódico
dc.typeEstrangeiro


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