Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

dc.creatorWirth, Gilson Inacio
dc.creatorKoh, Jeongwook
dc.creatorSilva, Roberto da
dc.creatorThewes, Roland
dc.creatorBrederlow, Ralf
dc.date2011-01-29T06:00:34Z
dc.date2005
dc.identifier0018-9383
dc.identifierhttp://hdl.handle.net/10183/27600
dc.identifier000556789
dc.descriptionThe low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.
dc.formatapplication/pdf
dc.languageeng
dc.relationIEEE transactions on electron devices. New York, NY. Vol. 52, n. 7 (July 2005), p. 1576-1588
dc.rightsOpen Access
dc.subjectAnalog circuits
dc.subjectLow-frequency noise (LF-noise)
dc.subjectMOS transistors
dc.subjectNoise modeling
dc.subjectRF circuits
dc.subjectSemiconductor device noise
dc.subjectMicroeletrônica
dc.titleModeling of statistical low-frequency noise of deep-submicrometer MOSFETs
dc.typeArtigo de periódico
dc.typeEstrangeiro


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