Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters

dc.creatorFabián Zárate Rincón
dc.creatorGERMAN ANDRES ALVAREZ BOTERO
dc.creatorReydezel Torres Torres
dc.creatorRoberto Stack Murphy Arteaga
dc.date2013-08
dc.date.accessioned2023-07-25T16:25:30Z
dc.date.available2023-07-25T16:25:30Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2389
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807565
dc.descriptionUsing a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, atwo-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the electrical parameters of a MOSFET that are influenced by the substrate effect when the frequency rises. Physically expected results are obtained for device’s model parameters, allowing to accurately reproduce S-parameters up to 20 GHz. Furthermore, extracted parameters, such as threshold voltage, are in agreement with those obtained using well-established DC methods. This method allows one to characterize a four-terminal MOSFET from two-port small-signal measurements.
dc.formatapplication/pdf
dc.languageeng
dc.publisherIEEE Transactions on Electron Devices
dc.relationcitation:Zárate-Rincón, Fabián, et al., (2013), Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters, IEEE Transactions on Electron Devices, Vol. 60(8):2450-2456
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/DC methods
dc.subjectinfo:eu-repo/classification/Inspec/Physical parameters of MOSFET
dc.subjectinfo:eu-repo/classification/Inspec/RF-MOSFET
dc.subjectinfo:eu-repo/classification/Inspec/Two-port S-parameter measurements.
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleCharacterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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