Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides

dc.creatorALFONSO TORRES JACOME
dc.creatorIgnacio Enrique Zaldívar Huerta
dc.date2012-12-28
dc.date.accessioned2023-07-25T16:25:30Z
dc.date.available2023-07-25T16:25:30Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2382
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807558
dc.descriptionWe demonstrate Ge-on-Si metal-semiconductor-metal (MSM) photodetectors monolithically integrated with silicon oxynitride (SiOxNy) waveguides. The waveguide is placed on top of the photodetector and between the metal electrodes, evading the shading effect by metal electrodes, which is typical in surface-illuminated MSM photodetectors. The devices showed responsivity of about 0.45 A/W for 80 μm long devices at 1550 nm. The photodetector with 1.5 μm electrode spacing showed 3 dB bandwidth of 2.0 GHz at -2V and 2 μA dark current. Further studies suggest that with a modified design the structure is capable of achieving 1 A/W responsivity and greater bandwidth. © 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773212]
dc.formatapplication/pdf
dc.languageeng
dc.publisherApplied Physics Letters
dc.relationcitation:Cervantes-González, Juan C., et al., (2012), Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides, Applied Physics Letters, Vol. 101(26):1-4
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Dielectric waveguides
dc.subjectinfo:eu-repo/classification/Inspec/Electrodes
dc.subjectinfo:eu-repo/classification/Inspec/Elemental semiconductors
dc.subjectinfo:eu-repo/classification/Inspec/Ge-Si alloys
dc.subjectinfo:eu-repo/classification/Inspec/Metal-semiconductor-metal structures
dc.subjectinfo:eu-repo/classification/Inspec/Photodetectors
dc.subjectinfo:eu-repo/classification/Inspec/Silicon compounds
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleGermanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


Este ítem pertenece a la siguiente institución