dc.creatorCLAUDIA REYES BETANZO
dc.date2013-04-15
dc.date.accessioned2023-07-25T16:25:26Z
dc.date.available2023-07-25T16:25:26Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2354
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807530
dc.descriptionA piecewise linear algorithm for predicting silicon etch rates in fluorine-based plasmas is shown. Discrete experimental data of pressure and RF power in reactive ion etching are used to construct a set of local two-dimensional etching functions that serve as a basis for computing numerical solutions (pressure and power values for a specific predicted silicon etch rate). It must be pointed out that, although the algorithm scans the entire data domain, a testing procedure is applied to ensure that the computing task will be invoked only when a solution exists, and otherwise it will be discarded (this avoids brute force methods). In the last step of the algorithm, all solutions are collected and interpolated to construct a solution path. In order to verify the match between the experimental etching results and numerical predictions, the algorithm has been coded and tested using Maple® Release 13.0, showing a successful validation with a difference between experimental data and computed numerical solutions as low as 1% for SF₆, and 4% for SF₆/O₂ in the best case and a root-mean squared error of 0.03.
dc.formatapplication/pdf
dc.languageeng
dc.publisherJournal of the Chinese Institute of Engineers
dc.relationcitation:Jimenez-Fernandez, V.M., et al., (2013), Prediction of silicon dry etching using a piecewise linear algorithm, Journal of the Chinese Institute of Engineers, Vol. 36(7): 941–950
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Silicon etching
dc.subjectinfo:eu-repo/classification/Inspec/Piecewise linear
dc.subjectinfo:eu-repo/classification/Inspec/Algorithm
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titlePrediction of silicon dry etching using a piecewise linear algorithm
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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