dc.creatorEmmanuel Torres Ríos
dc.creatorReydezel Torres Torres
dc.creatorEdmundo Antonio Gutiérrez Domínguez
dc.date2013-03
dc.date.accessioned2023-07-25T16:25:20Z
dc.date.available2023-07-25T16:25:20Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2299
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807478
dc.descriptionA method for characterizing low-voltage-operating MOSFETs through small-signal S-parameters is introduced. The method allows extracting the drain-to-source channel resistance at zero drain-to-source voltage, which is not feasible with dc conventional methods. Furthermore, this zero drain-to-source voltage RF method identifies the gate voltage where the diffusion and drift conduction mechanisms overlap. This is really helpful in defining the appropriate subthreshold drain current model and its corresponding impact at RF operating conditions. The proposed experimental RF method is validated and compared with a dc-based method for an 80-nm-channel-length nMOSFET.
dc.formatapplication/pdf
dc.languageeng
dc.publisherIEEE Transactions on electron devices
dc.relationcitation:Torres-Rios, Emmanuel, et al., (2013), Identifying the Diffusion and Drift Conduction Regions in MOSFETs Through S-Parameters, IEEE Transactions on electron devices, Vol. 60(3): 1288 – 1291
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/RF-MOSFET
dc.subjectinfo:eu-repo/classification/Inspec/S-parameters
dc.subjectinfo:eu-repo/classification/Inspec/Subthreshold
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleIdentifying the Diffusion and Drift Conduction Regions in MOSFETs Through S-Parameters
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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