Modeling the Al/Si rich oxide (SRO)/Si structure

dc.creatorMARIANO ACEVES MIJARES
dc.date2002-06-10
dc.date.accessioned2023-07-25T16:25:19Z
dc.date.available2023-07-25T16:25:19Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2288
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807467
dc.descriptionAl/SRO/Si devices produced on N-type silicon are experimentally characterized to understand their behavior. Different values were used for the nitrous oxide/silane gas flow ratio (Ro) to control the excess silicon. Depending on the silicon excess, the devices could be operated in various modes; from surface accumulation to deep depletion or to a reverse biased PN junction. Modeling of the different devices is presented. © 2002 American Vacuum Society. @DOI: 10.1116/1.1498277#
dc.formatapplication/pdf
dc.languageeng
dc.publisherJournal of Vacuum Science & Technology B
dc.relationcitation:Aceves, M, et al., (2002), Modeling the Al/Si rich oxide (SRO)/Si structure, Journal of Vacuum Science & Technology B, Vol. 20(5):1-8
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Nitrous oxide
dc.subjectinfo:eu-repo/classification/Inspec/PN junction
dc.subjectinfo:eu-repo/classification/Inspec/N-type silicon
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleModeling the Al/Si rich oxide (SRO)/Si structure
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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