Modeling Transmission Lines on Silicon in the Frequency and Time Domains from S-Parameters

dc.creatorSVETLANA CARSOF SEJAS GARCIA
dc.creatorReydezel Torres Torres
dc.creatorRoberto Stack Murphy Arteaga
dc.date2012-06
dc.date.accessioned2023-07-25T16:24:59Z
dc.date.available2023-07-25T16:24:59Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2119
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807300
dc.descriptionThis brief presents the full characterization andmodeling of uniform transmission lines on silicon. It includes the implementation of equivalent circuit models in both the frequency and time domains to perform accurate and causal simulations up to 30 GHz and for rise times in the order of picoseconds, respectively. These models can be directly implemented in SPICE-like simulators to obtain fast and physically based results when working on RFCMOS.
dc.formatapplication/pdf
dc.languageeng
dc.publisherIEEE Transactions on Electron Devices
dc.relationcitation:Sejas-García, Svetlana C., et al., (2012), Modeling Transmission Lines on Silicon in the Frequency and Time Domains from S-Parameters, IEEE Transactions on Electron Devices, Vol. 59(6):1803–1806
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/CPW
dc.subjectinfo:eu-repo/classification/Inspec/Skin effect
dc.subjectinfo:eu-repo/classification/Inspec/Transmission-line loss
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleModeling Transmission Lines on Silicon in the Frequency and Time Domains from S-Parameters
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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