dc.creatorMARIO MORENO MORENO
dc.creatorALFONSO TORRES JACOME
dc.creatorPedro Rosales Quintero
dc.creatorANDREY KOSAREV
dc.creatorCLAUDIA REYES BETANZO
dc.creatorCARLOS ZUÑIGA ISLAS
dc.date2012
dc.date.accessioned2023-07-25T16:24:58Z
dc.date.available2023-07-25T16:24:58Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2105
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807286
dc.descriptionIn this work we present a comparative study on the electrical characteristics of polymorphous silicon (pm-Si:H) and polymorphous germanium (pm-Ge:H) thin films deposited by low frequency plasma enhanced chemical vapor deposition (LF-PECVD), aiming to use them as thermo sensing elements in uncooled microbolometers. We studied th e effect of the deposition pressure on the film characteristics that are important for IR detection, as the activation energy (Ea), the thermal coefficient of resistance (TCR), the room temperature conductivity (σTR) and the film responsivity with IR radiation. Our results indicate that polymorphous films have advantages over boron doped a-Si:H, material which is currently employed as thermo-sensing element in commercial microbolometer arrays.
dc.formatapplication/pdf
dc.languageeng
dc.publisherJournal of Non-Crystalline Solids
dc.relationcitation:Moreno, M., et al., (2012), Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors, Journal of Non-Crystalline Solids, Vol. 358(17):2336–2339
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Polymorphous
dc.subjectinfo:eu-repo/classification/Inspec/Silicon
dc.subjectinfo:eu-repo/classification/Inspec/Germanium
dc.subjectinfo:eu-repo/classification/Inspec/Amorphous
dc.subjectinfo:eu-repo/classification/Inspec/Microbolometers
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleStudy of polymorphous silicon and germanium as thermo-sensing films for infrared detectors
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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