High Quality SiO₂ Obtained From diluted SOG for Low Temperature TFT Fabrication Process

dc.creatorMiguel Dominguez
dc.creatorALFONSO TORRES JACOME
dc.creatorPedro Rosales Quintero
dc.creatorCLAUDIA REYES BETANZO
dc.date2012
dc.date.accessioned2023-07-25T16:24:57Z
dc.date.available2023-07-25T16:24:57Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2103
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807284
dc.descriptionCurrently, the flexible electronics research field is of high interest because of the development of low cost products, such as solar cells and LCDs. Low temperature deposition processes are required in order to use flexible substrates. Nevertheless, the performance of the electronic devices built at temperatures below 350 °C is not as good as in CMOS technology. Thus, physical and electrical properties of semiconductor and insulator materials deposited at these low temperatures must be improved. In this work, characterization of SiO₂ annealed at 200°C obtained from diluted Spin On Glass (SOG) is presented. The optical and electrical characterization showed that the refractive index (n) and dielectric constant (k) values are similar to those of thermally grown SiO₂. TFTs based on a-SiGe:H were fabricated to demonstrate the quality of the dielectric here obtained
dc.formatapplication/pdf
dc.languageeng
dc.publisherECS Transactions
dc.relationcitation:Dominguez J., Miguel A., et al., (2012), High Quality SiO₂ Obtained From diluted SOG for Low Temperature TFT Fabrication Process, ECS Transactions, Vol. 49(1):399-405
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/High Quality SiO₂
dc.subjectinfo:eu-repo/classification/Inspec/Temperature TFT Fabrication
dc.subjectinfo:eu-repo/classification/Inspec/LCDs
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleHigh Quality SiO₂ Obtained From diluted SOG for Low Temperature TFT Fabrication Process
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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