dc.creator | Miguel Dominguez | |
dc.creator | Pedro Rosales Quintero | |
dc.creator | ALFONSO TORRES JACOME | |
dc.creator | MARIO MORENO MORENO | |
dc.creator | Joel Molina Reyes | |
dc.creator | FRANCISCO JAVIER DE LA HIDALGA WADE | |
dc.creator | CARLOS ZUÑIGA ISLAS | |
dc.creator | Wilfrido Calleja Arriaga | |
dc.date | 2012 | |
dc.date.accessioned | 2023-07-25T16:24:57Z | |
dc.date.available | 2023-07-25T16:24:57Z | |
dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2097 | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7807278 | |
dc.description | In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V/DEC and 10⁴ for were measured for the p-type region. We also obtained the characteristic energies for the deep localized states of the a-SiGe:H film, the flat-band voltages, and threshold voltages among other device parameters for the ambipolar thin-film transistors. | |
dc.format | application/pdf | |
dc.language | eng | |
dc.publisher | Journal of Non-Crystalline Solids | |
dc.relation | citation:Dominguez, Miguel, et al., (2012), Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C, Journal of Non-Crystalline Solids, Vol. 358:2340–2343 | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
dc.subject | info:eu-repo/classification/Inspec/Thin-film transistor | |
dc.subject | info:eu-repo/classification/Inspec/Hydrogenated amorphous | |
dc.subject | info:eu-repo/classification/Inspec/Spin-On Glass | |
dc.subject | info:eu-repo/classification/Inspec/Silicon–germanium | |
dc.subject | info:eu-repo/classification/cti/1 | |
dc.subject | info:eu-repo/classification/cti/22 | |
dc.subject | info:eu-repo/classification/cti/2203 | |
dc.subject | info:eu-repo/classification/cti/2203 | |
dc.title | Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C | |
dc.type | info:eu-repo/semantics/article | |
dc.type | info:eu-repo/semantics/acceptedVersion | |
dc.audience | students | |
dc.audience | researchers | |
dc.audience | generalPublic | |