dc.creatorMiguel Dominguez
dc.creatorPedro Rosales Quintero
dc.creatorALFONSO TORRES JACOME
dc.creatorMARIO MORENO MORENO
dc.creatorJoel Molina Reyes
dc.creatorFRANCISCO JAVIER DE LA HIDALGA WADE
dc.creatorCARLOS ZUÑIGA ISLAS
dc.creatorWilfrido Calleja Arriaga
dc.date2012
dc.date.accessioned2023-07-25T16:24:57Z
dc.date.available2023-07-25T16:24:57Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2097
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807278
dc.descriptionIn this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V/DEC and 10⁴ for were measured for the p-type region. We also obtained the characteristic energies for the deep localized states of the a-SiGe:H film, the flat-band voltages, and threshold voltages among other device parameters for the ambipolar thin-film transistors.
dc.formatapplication/pdf
dc.languageeng
dc.publisherJournal of Non-Crystalline Solids
dc.relationcitation:Dominguez, Miguel, et al., (2012), Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C, Journal of Non-Crystalline Solids, Vol. 358:2340–2343
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Thin-film transistor
dc.subjectinfo:eu-repo/classification/Inspec/Hydrogenated amorphous
dc.subjectinfo:eu-repo/classification/Inspec/Spin-On Glass
dc.subjectinfo:eu-repo/classification/Inspec/Silicon–germanium
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleAmbipolar a-SiGe:H thin-film transistors fabricated at 200 °C
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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