HfO₂ nanoparticles embedded within a SOG-based oxide matrix as charge trapping layer for SOHOS-type memory applications

dc.creatorJoel Molina Reyes
dc.creatorRafael Ortega
dc.creatorWilfrido Calleja Arriaga
dc.creatorPedro Rosales Quintero
dc.creatorCARLOS ZUÑIGA ISLAS
dc.creatorALFONSO TORRES JACOME
dc.date2012
dc.date.accessioned2023-07-25T16:24:57Z
dc.date.available2023-07-25T16:24:57Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2096
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807277
dc.descriptionIn this work, HfO₂ nanoparticles (np-HfO₂) are embedded within an amorphous Spin-On Glass (SOG)-based oxide matrix and used as charge-trapping layer for memory pplications. Following specific thermal treatments, the np-HfO₂ act as charge storage nodes able to retain charge injected after applying a constant gate voltage. A Silicon-Oxide-High-k-Oxide-Silicon (SOHOS)-type memory has been fabricated with the high-k charge-trapping layer containing 5, 10 and 15% of np-HfO₂ concentration within the SOG-oxide matrix. The memory's charge trapping characteristics are quantized by measuring the flat-band voltage (Vfb) shift of SOHOS capacitors after charge injection and then correlated to np-HfO₂ concentration. Since a large memory window has been obtained for our SOHOS memory, the relatively easy injection/annihilation (programming/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge-trapping layer. A very small injected charge density of 1×10⁻⁶ C/cm² shifts Vfb by 100 mV without needing to overstress the dielectric by hot-carrier injection, a usual method in SOHOS memories. In conclusion, using a simple spin-coating method for the charge-trapping layer, wide current memory windows have been obtained in SOHOS-memories and their charge-trapping characteristics are quantized and correlated to the np-HfO₂. concentration.
dc.formatapplication/pdf
dc.languageeng
dc.publisherJournal of Non-Crystalline Solids
dc.relationcitation:Molina, J., et al., (2012), HfO₂ nanoparticles embedded within a SOG-based oxide matrix as charge trapping layer for SOHOS-type memory applications, Journal of Non-Crystalline Solids, Vol. 358:2482–2488
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/HfO₂ nanoparticles
dc.subjectinfo:eu-repo/classification/Inspec/SOHOS memory
dc.subjectinfo:eu-repo/classification/Inspec/Charge trapping
dc.subjectinfo:eu-repo/classification/Inspec/Spin-On Glass
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleHfO₂ nanoparticles embedded within a SOG-based oxide matrix as charge trapping layer for SOHOS-type memory applications
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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