MOHOS-type memory performance using HfO₂ nanoparticles as charge trapping layer and low temperature annealing

dc.creatorJoel Molina Reyes
dc.creatorRafael Ortega
dc.creatorWilfrido Calleja Arriaga
dc.creatorPedro Rosales Quintero
dc.creatorCARLOS ZUÑIGA ISLAS
dc.creatorALFONSO TORRES JACOME
dc.date2012
dc.date.accessioned2023-07-25T16:24:57Z
dc.date.available2023-07-25T16:24:57Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2095
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807276
dc.descriptionIn this work, HfO₂ nanoparticles (np-HfO₂) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO₂ and low temperature annealing (down to 425 ◦C) in order to obtain charge–retention characteristics with a lower termal budget. The memory’scharge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO₂ concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO₂ as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.
dc.formatapplication/pdf
dc.languageeng
dc.publisherMaterials Science and Engineering B
dc.relationcitation:Molina, Joel, et al., (2012), MOHOS-type memory performance using HfO₂ nanoparticles as charge trapping layer and low temperature annealing, Materials Science and Engineering B, Vol. 177:1501–1508.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/HfO₂ nanoparticles
dc.subjectinfo:eu-repo/classification/Inspec/MOHOS memory
dc.subjectinfo:eu-repo/classification/Inspec/Charge-trapping layer
dc.subjectinfo:eu-repo/classification/Inspec/Spin-on glass
dc.subjectinfo:eu-repo/classification/Inspec/Retention time
dc.subjectinfo:eu-repo/classification/Inspec/Low temperature annealing
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleMOHOS-type memory performance using HfO₂ nanoparticles as charge trapping layer and low temperature annealing
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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