High-quality spin-on glass-based oxide as a matrix for embedding HfO₂ nanoparticles for metal-oxide-semiconductor capacitors

dc.creatorJoel Molina Reyes
dc.creatorANA LUZ MUÑOZ ROSAS
dc.creatorWilfrido Calleja Arriaga
dc.creatorPedro Rosales Quintero
dc.creatorALFONSO TORRES JACOME
dc.date2012
dc.date.accessioned2023-07-25T16:24:56Z
dc.date.available2023-07-25T16:24:56Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2094
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807275
dc.descriptionBy using a low cost, simple, and reproducible spin-coating method, thin films of SOG (spin-on-glass)-based oxides with electrical characteristics resembling those of a dry thermal oxide have been obtained. The superior electrical characteristics of Metal-Oxide-Semiconductor (MOS) capacitors based on SOG-oxides come from both (1) reducing the organic content of the SOG solutions after dilution with deionized water and (2) passivation of the silicon surface by a thin chemical oxide. Fourier transform infrared spectroscopy analysis shows that the organic content in H₂O-diluted SOG-oxides is reduced compared to undiluted SOG after N₂ annealing. In addition, by chemically embedding HfO₂ nanoparticles (np-HfO₂) to these SOG-based oxides, an effective increase in the accumulation capacitance of MOS capacitors is observed and this is related to the increase in the final dielectric constant of the resulting oxide after annealing so that potential use of SOG as a glass matrix for embedding HfO₂ nanoparticles and produce higher-k oxide materials is demonstrated.
dc.formatapplication/pdf
dc.languageeng
dc.publisherJ. Mater Sci.
dc.relationcitation:Molina, Joel, et al., (2012), High-quality spin-on glass-based oxide as a matrix for embedding HfO₂ nanoparticles for metal-oxide-semiconductor capacitors, J. Mater Sci, Vol. 47:2248–2255.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/High-quality spin-on glass-based oxide
dc.subjectinfo:eu-repo/classification/Inspec/Metal-oxide-semiconductor capacitors
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleHigh-quality spin-on glass-based oxide as a matrix for embedding HfO₂ nanoparticles for metal-oxide-semiconductor capacitors
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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